Product Summary

The MD87C51/B EPROM array is fabricated on Intel’s CHMOS II-E process. It contains 4 Kbytes of on-chip program memory that can be electrically programmed, and can be erased by exposure to ultraviolet light. The MD87C51/B EPROM array uses a modified quick-pulse programming algorithm, by which the entire 4 Kbyte array can be programmed in about 12 seconds.

Parametrics

MD87C51/B absolute maximum ratings: (1)case temperature under bias: -55 to +125 ℃; (2)storage temperature: -65 to +150 ℃; (3)voltage on EA/Vpp pin to VSS: 0 V to +13.0 V; (4)voltage on any other pin to VSS: -0.5 V to +6.5V; (5)power dissipation: 1.5 W.

Features

MD87C51/B features: (1)high performance CHMOS EPROM; (2)quick-pulse programming algorithm; (3)2-level program memory lock; (4)boolean processor; (5)128-byte data RAM; (6)32 programmable I/O lines; (7)two 16-bit timer/counters; (8)5 interrupt sources; (9)avaliable in 40-pin CERDIP, 44-pin leadless chip carrier, 44-pin gull-wing and 44-pin J-lead packages; (10)programmable serial channel; (11)TTL- and CMOS-compatible logic levels; (12)64K external program memory space.

Diagrams

MD87C51/B block diagram